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Influence of Defect on Green Electroluminescence from Silicon Nanoparticles

Keisuke Sato 1,2Kenji Hirakuri 1Mitsuo Iwase 3Tomio Izumi 4

1. Dept. of Electronic and Computer Engineering, Tokyo Denki University, Ishizaka, Hatoyama, Hikigun, Saitama 350-0394, Japan
2. Dept. of Applied Science, Tokai University, Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
3. Dept. of Materials Science, Tokai University, Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
4. Dept. of Electronics, Tokai University, Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

Abstract

Silicon (Si) nanoparticles is one of promising materials for application to flat panel display such as light emitting diodes (LED) and electroluminescence (EL) because it emits visible light at room temperature. Previously, we obtained red luminescence with long lifetime and high brightness from the Si nanoparticles based EL device under relatively low operating voltage. In this paper, we report a correlation between defects and luminescent property from the EL device composed of Si nanoparticles which emits green light.
The Si nanoparticles were formed in a silicon dioxide (SiO2) layer by co-sputtering of Si/SiO2 targets and subsequently annealing at high temperature. The Si nanoparticles, then, were appeared on the sample surface by treating in hydrofluoric (HF) acid solution. The size of Si nanoparticles, which appeared on the surface, was tuned by the thermal oxidation treatment to vary the luminescent color. And the oxidized Si nanoparticles used as luminous layer of EL device.
The EL device using oxidized Si nanoparticles exhibited green luminescence with a peak of 560 nm by the reduction of particle size due to oxidation onto the surface. The luminance of green luminescence was increased with increasing the density of Pce-center (radiative recombination center) on the Si nanoparticle surface because the Pb-center (non-radiative recombination center) was terminated with oxygen atoms.

 

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Related papers

Presentation: poster at E-MRS Fall Meeting 2004, Symposium A, by Keisuke Sato
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-24 13:21
Revised:   2009-06-08 12:55