Several properties of materials depend, to a large extent, on the character and distribution of crystallographic defects. This paper proposes a method to estimate the density of these defects at defined points of the sample, based on quantitative Electron BackScatter Diffraction (EBSD) data analysis in Environmental Scanning Electron Microscope (ESEM). The principle of the method is based on the effect of the diffraction lines broadening at each point where the local density of defects rises. The work presents a few examples of analysis of alumina and zirconia ceramics, which surfaces were deformed by shoot pining. The method appears easy to be for implementation, provided that several conditions, discussed in the paper, are met. |