Search for content and authors
 

Hydrostatic pressure and Γ − X mixing effects on the exciton and impurity related optical properties in GaAs-Ga1−xAlxAs quantum wells

Carlos A. Duque 1Sonia Y. López 1Miguel E. Mora-Ramos 2

1. Universidad de Antioquia (UA), Calle-67-N-53-108, Medellín 05001000, Colombia
2. Universidad (UAEM), Av.-Universidad-1001, Cuernavaca 62209, Mexico

Abstract

The mixing between the Γ and X conduction-band valleys in GaAs-Ga1−xAlxAs quantum wells is investigated by using both a phenomenological and a variational models which take into account the effects of applied hydrostatic pressure. The dependencies of the calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ −X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ −X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga1−xAlxAs quantum wells.

 

Legal notice
  • Legal notice:
 

Related papers

Presentation: Poster at E-MRS Fall Meeting 2008, Symposium G, by Carlos A. Duque
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-12 17:50
Revised:   2009-06-07 00:48