Photorefractive CdTe for laser ultrasonics receivers

Konstantin Shcherbin 2Volodymyr Danylyuk 2Zinaida Zakharuk 1Ilariy M. Rarenko 1Marvin Klein 3

1. Chernivtsi National University (ChNU), 2 Kotsubinsky Str., Chernivtsi 58012, Ukraine
2. Institute of Physics, National Academy of Sciences, Prospekt Nauki 46, Kyiv 03650, Ukraine
3. Lasson Technologies, Inc., Culver City, CA 90230, United States

Abstract

Semiconductor crystals lacking the symmetry center exhibit photorefractive effect. One of the most promising application of the photorefractive semiconductors is remote detection of ultrasonic waves with adaptive interferometers. Because of the fast response the photorefractive semiconductors exhibit adaptability to a wide range of mechanical and optical disturbances that are encountered in the factory environment. Cadmium telluride (CdTe) possesses the largest electro-optic constant among all semiconductors. It is thus a promising material for use in laser ultrasonic receivers. An important advantage of CdTe is its sensitivity in the near infrared and at 1.5 μm in particular, where many commercial solid-state lasers and laser diodes are available. The latter wavelength is important because it lies in the "eye-safe" spectral range and because this is telecommunication wavelength range.
In present work photorefractive CdTe:Ge crystals are studied as a medium for laser ultrasonic detection at 1.06 μm and 1.55 μm. The complex coupling strength is estimated for the two-beam coupling configuration in the presence of a dc field. Excellent performance of the material is shown at both wavelengths by demonstration of high sensitivity and high cutoff frequency at low intensity.

 

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium F, by Konstantin Shcherbin
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-03-24 12:12
Revised:   2009-06-08 12:55