GaN and InN have attracted immense importance due to their unique properties. These two kinds of materials have attracted much attention as materials for their optoelectronic applications and high power electron devices. On the other hand, the heat management in these III-nitride based semiconductor devices becomes a serious issue for the electronic industry. A proper treatment of this problem must include the effect of interfaces and thin film layers on heat flow. In this study, we have focused on the thermal properties in GaN and InN thin films on different substrates. The thermal diffusivities (α) of GaN and InN films were measured by the travelling wave technique, investigating the effect of thickness on InN films. This method is based on the well known principle of phase lag of travelling thermal wave. The thermal diffusivities (α) of GaN and InN films were measured by the traveling wave technique which is based on the well known principle of phase lag of travelling thermal wave. A thermal diffusivity of 0.83 cm²/s (k=216 W/mK) was obtained in GaN/Sapphire combination. The effective thermal diffusivity of InN/Sapphire, InN/GaN/Sapphire and InN/ITO/Glass were estimated to be 0.626, 0.666 and 0.467 cm²/s respectively. According to thermal diffusivity, the thermal conductivity (k) of different kinds of materials were obtained of about 122, 145 and 94 W/mK. This high α (or k) value suggests a lower degree of phonon scattering in our InN films with fewer structural defects than reported. These results showed a successful synthesis of InN and GaN thin films on various substrates, which is important for device applications.

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