Nowadays nanotemplates based on porous alumina are commercially available. However, the high resistivity nanomatrix of porous alumina plays only a passive role in nanofabrication. At the same time it is well known that the properties of semiconductor materials can be easily modified by external illumination, applied electric and/or magnetic fields etc., thus implying that semiconductor nanotemplates may in fact play an active role in nanofabrication. We report on the fabrication of semiconductor nanotemplates based on III-V and II-VI semiconductor compounds, namely on InP (E_g = 1.3 eV at 300 K), CdSe (E_g = 1.7 eV), GaP (E_g = 2.3 eV), and ZnSe (E_g = 2.7 eV), using electrochemical and chemical wet etching techniques. Growth of ordered two-dimensional hexagonal arrays of nanochannels is achieved thanks to self-arrangement phenomena. Membranes with mirror-like surfaces and pore diameters ranging from about 50 nm to several hundreds of nanometers were fabricated using the proposed technological approaches. We demonstrate the possibility to grow ordered arrays of metal nanowires and nanotubes using pulsed electrochemical deposition of Pt, Cu and Ag from solutions of relevant salts. A strong charging effect is observed in metal nanowires and nanotubes due to the potential barrier at the metal-semiconductor interface. Characteristics of novel varicap structures based on metal-semiconductor interpenetrating networks are presented. Possible applications of the developed two-dimensional metallo-dielectric periodic networks as photonic band-gap structures are discussed.

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