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SiO2 and Si3N4 Films by Remote Plasma Enhanced Atomic Layer Deposition

Qi Fang ,  Chris Hodson 

Oxford Instruments Plasma Technology (OIPT), North End, Yatton, Bristol BS49-4AP, United Kingdom

Abstract

Increasingly ultra thin film processing is required for MEMs, nanostructure devices such as bio-sensors, detector-arrays, quantum devices and plastic electronics. Although Atomic Layer Deposition (ALD) is capable of depositing many different materials, the more traditional oxides and nitrides of silicon are still of considerable interest due to their many applications and long established material properties. This contribution focuses on SiO2 and Si3N4 thin films grown by remote plasma enhanced ALD at low temperatures. The SiOx and SiNx layers were prepared using various amino-silane sources, which will be discussed. The SiOx layers were deposited using oxygen plasma as the oxidant and deposition rates of around 1.4 Å/cycle at a temperature of 300oC have been obtained, see figure 1. The effect of the processing parameters, such as deposition temperature, the dose time of the precursors, ratio of nitrogen and hydrogen (for SiNx), plasma power and plasma time, on the deposition rate and optical and electrical properties of the SiOx and SiNx thin films are also discussed.

Spectroscopic Ellipsometer (SE), FTIR, AES, SEM, hydrofluoric acid etch rates and electrical measurement were used for characterisation of the physical, electrical, chemical and optical properties of the as-deposited SiOx and SiNx thin films. Effect of post-annealing on the ALD SiOx and SiNx films will be discussed as well.

Figure 1, growth rate of SiOx using an aminosilane source and oxygen plasma at 300°C.

Figure1.JPG

 

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Presentation: Poster at E-MRS Fall Meeting 2007, Symposium C, by Qi Fang
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-16 15:09
Revised:   2009-06-07 00:44