Microstructure and Electrical Properties of Doped ZnO Varistor Nanomaterials

Xueya Kang 1Tu MinJing 1Zhang Ming 2

1. Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences(Urumuqi)830011 P.R.China, Beijing south road 40# add 1#, urumuqi 830011, China
2. Hong Ming & UESTC New Material Co., Ltd, ChengDu 610051, China

Abstract

A sol-gel method of preparation doped ZnO varistor nanomaterials is described, The influences of doped ZnO nanomaterials for varistor microstructure and electrical properties (nonlinear coefficient α, breakdown voltage V1mA , dielectric constant ε, and dielectric loss tan δ) are investigated. Compared with the conventional mixed oxide technique, varistor ceramic of prepared by nanometer materials showed more homogeneous microstructure, smaller grain sizes, higher densities and excellent electrical properties.

 

Presentation: oral at E-MRS Fall Meeting 2003, Symposium F, by Xueya Kang
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-07-14 04:54
Revised:   2009-06-08 12:55