Atomic layer deposition of crystalline Al2O3 thin films

Jaan Aarik 1Aleks Aidla 1Aarne Kasikov 1Hugo Mändar 1Teet Uustare 1Jun Lu 2

1. Institute of Physics, University of Tartu, Riia str. 142, Tartu 51014, Estonia
2. Angström Microstructure Laboratory, Departement of Engineering Sciences, Uppsala University, Box 534, Uppsala 75121, Sweden


Atomic layer deposition of Al2O3 from vapors of AlCl3 and H2O was studied in the substrate temperature range of 200–900°C in order to explore possibilities for growing crystalline films. On single crystal silicon and amorphous silica substrates, the films started to crystallize at temperatures exceeding 600°C being, however, of relatively poor crystallinity even when grown at temperatures as high as 800–900°C. Nevertheless, a marked increase of density and refractive index was observed with appearance of crystalline phase in the films. On single crystal sapphire substrates as well as on epitaxial TiO2 and SnO2, epitaxial Al2O3 films were successfully obtained at 700°C and higher temperatures. On epitaxial Cr2O3, by contrast, the substrate temperature as low as 500°C was sufficient to grow epitaxial Al2O3.


Related papers
  1. Raman characterization of strain in epitaxial Cr2O3 films on sapphire
  2. Atomic Layer deposition of iron oxide nanotubes
  3. X-ray absorption spectroscopy as a method for structural study of HfO2 and ZrO2 thin films

Presentation: Oral at E-MRS Fall Meeting 2007, Symposium C, by Jaan Aarik
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-14 18:35
Revised:   2009-06-07 00:44