Sub-surface Investigation of Open-volume Defects induced by Ion Implantation in Zirconia Single Crystals

Sebastien Saude 2,3Robert I. GRYNSZPAN 2,3Wolfgang ANWAND 1Gerhard BRAUER 1

1. Forschungszentrum Rossendorf (FZR), Dresden 01314, Germany
2. Lab. Chimie Métallurgique des Terres Rares, CNRS UPR 209, Institiut des Sciences Chimiques Seine-Amont, (LCMTR-CNRS), 8 rue Henri Dunant, Thiais 94320, France
3. Délégation Générale pour l'Armement, Centre Technique d'Arcueil, Dept. Lasers, Optics and Thermo-optics, (DGA/CTA/LOT), 16 bis Ave. Prieur de la Côte d'Or, Arcueil 94114, France


The knowledge of defect type and distribution induced during ion implantation in oxide materials is of special technological interest in microelectronics processing. In this work, using Slow Positron Implantation Spectroscopy, we tentatively characterize the nature of possible open-volume defects resulting from such irradiation in cubic zirconia (fully-stabilized with 9.5 mole % of yttria). In particular, in order to check which empty substitutional sites are effective in trapping positrons, we implanted self-ions (e.g. : oxygen) at low energy (projected range ~ 200 nm). The trapping dependence on both the irradiation dose and the temperature annealing up to 1100 C is compared with previous results obtained after foreign ion implantation (noble gas ions for instance).

Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Sebastien Saude
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-07-11 18:20
Revised:   2009-06-08 12:55
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