Wide band-gap light emitters with improved hole injection
|V A. Kochelap|
Institute of Semiconductor Physics (ISP), Nauki pr., Kyiv 03028, Ukraine
The difficulties in achieving high hole concentrations in group-III nitrides originate from high values of activation energy of acceptors. The average hole concentration can be increased in a p-doped nitride superlattice (SL). However, most of the holes ionized from the acceptors are localized inside the quantum wells (QWs) and cannot participate in vertical transport utilized in traditional light-emitting devices (LEDs). In this report we propose two novel solutions of the problem of hole injection enhancement in wide band-gap LEDs.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium A, by V A. Kochelap
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-07-10 12:48 Revised: 2009-06-08 12:55