Evaluation of the efficiency of semiconductor materials for quantum computing

Vitalij G. Deibuk ,  Genady P. Gorsky 

Chernivtsi National University (ChNU), 2 Kotsubinsky Str., Chernivtsi 58012, Ukraine

Abstract

Solid-state implementations of quantum computing(QC) are particularly attractive because of the possibility of using existing computer technology to scale small numbers of qubits up to the 105 or so that would be needed for nontrivial computations. In this communication we examine the decoherence times for some of the existing proposals based on electron-spin qubits in the different Si-based heterostructures. We calculate the relaxation rate (1/T1) as a function of uniaxial strain, temperature, magnetic field and alloy content. In general, we find that the relaxation rate is strongly decreased by uniaxial compressive strain, making this strain an important positive design feature. Si-rich structures are to be preferred because relaxation time increases with increasing Si content in the investigated alloys.

Related papers
  1. Quantum computations in ZnO:Fe3+ system
  2. Modelling of the III-V thin films wettability
  3. Peculiarities of the microhardness in Cd1-xMnxTe
  4. HgCdMnZnTe: growth and physical properties
  5. Study the wettability of III-N thin films with different bond ionicity and surface layers polarity
  6. Atomic ordering in GeSn and SiSn advanced semiconductor alloys
  7. UNSTABLE MIXING REGIONS IN CdMnHgTe AND ZnMnHgTe SOLID SOLUTIONS
  8. Charge transfer and thermodynamic stability of ternary nitride solid solutions

Presentation: Poster at E-MRS Fall Meeting 2007, Acta Materialia Gold Medal Workshop, by Vitalij G. Deibuk
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-14 11:29
Revised:   2009-06-07 00:44
Google
 
Web science24.com
© 1998-2017 pielaszek research, all rights reserved Powered by the Conference Engine