Real-Time in situ x-ray diffraction studies on ZnSe epilayers grown on (001)GaAs
|Armin S. Bader|
With real-time in situ x-ray diffraction (RIX) we developed a novel method to monitor strain and strain relaxation during epitaxial growth. In our setup an extremely asymmetric 113 reflection is measured using divergent X-rays. A CCD camera serves as two-dimensional detector. Thus we are able to obtain the vertical lattice constant - which is otherwise typically measured by a θ-2θ scan - without rotating either the sample or the detector. Since the measurement time is just a few seconds, we can take time-resolved spectra which result in a relative thickness resolution in the order of 1nm.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium C, by Armin S. Bader
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-19 18:09 Revised: 2009-06-08 12:55