SiC - Present Status and Material Challanges

Peder Bergman ,  Liutauras Storasta ,  Carlsson Fredrik ,  Magnusson Bj√∂rn ,  Jakobsson Henrik ,  Hallin Christer ,  Janzen Erik 

Abstract

SiC is a material with properties of interest for high power and high frequency applications. The material quality including understanding and control of defects is however currently a limiting factor for many device applications. We will in this presentation discuss the current state-of-art of SiC for different applications, and the different material challanges in the form of material quality and reduction of defects.
The critical material issues are either related to general crystal quality, residual impurities, intrinsic defects, process related defects, or maybe most importantly to the influence of structural defects, such as dislocations, on the electrical properties of the material. The latter will be specially discussed and examplified by the formation and properties of stacking faults in bipolar diodes.

 

Related papers
  1. Advance in Epitaxial Growth of SiC for High Power Devices
  2. Optical Studies of Wide Band Gap III-Nitride Semiconductor Quantum Wells and Superlattices

Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium A, by Peder Bergman
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-06-18 20:52
Revised:   2009-06-08 12:55