SiC is a material with properties of interest for high power and high frequency applications. The material quality including understanding and control of defects is however currently a limiting factor for many device applications. We will in this presentation discuss the current state-of-art of SiC for different applications, and the different material challanges in the form of material quality and reduction of defects.
The critical material issues are either related to general crystal quality, residual impurities, intrinsic defects, process related defects, or maybe most importantly to the influence of structural defects, such as dislocations, on the electrical properties of the material. The latter will be specially discussed and examplified by the formation and properties of stacking faults in bipolar diodes.