Silicon oxy-nitride (SiO_xN_y) films prepared by radio-frequency magnetron sputtering were investigated as an anode modifier in organic light-emitting diodes (OLEDs). SiO_xN_y films were deposited between ITO and the hole transport layer of an OLED with a configuration of indium tin oxide (ITO)/SiO_xN_y/α-naphtylphenyliphenyl diamine (NPB) /8-hydroxyquinoline aluminum (AlQ)/Mg:Ag. By varying the argon and oxygen flow ratio during deposition of SiO_xN_y films, devices with improved electroluminescent performance and operation lifetime were obtained. The atomic composition of the SiO_xN_y films were analyzed by X-ray Photoelectron Microscopy. The best device with the optimal SiO_xN_y film showed a half brightness lifetime 5 times better than the control device.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/11008 must be provided.