In order to develop superconducting flux flow transistors (SFFTs), we propose a model to describe the current-voltage characteristics of fabricated devices by considering the Biot-Savart’s law. A single-channel SFFTs were successfully fabricated using an atomic force microscope (AFM) modification method and inductively coupled plasma (ICP) etching method in order to compare to the current-voltage characteristics. The measured and calculated values including flow voltage, transresistance and current gain are discussed in relation to the vortices flow in a single-channel SFFT. The predictions agree well with measured results.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/10986 must be provided.

1. Characteristics evaluation for stress corrosion cracking and hydrogen embrittlement of Al-Mg alloy in seawater
2. The optimum selection and protection characteristics with using impressed current cathodic protection for ship’s shaft materials
3. Characterization and modelling of a superconducting flux flow transistor with a three-channel structure by an atomic force microscope method