Semiconducting nanowires: properties and architectures
|Donats Erts 1, Boris Polyakov 1, Edgars Saks 1, Hakan Olin 2, Justin D. Holmes 3|
1. Institute of Chemical Physics, Riga LV-1586, Latvia
One-dimensional quantum wires are expected to play important role in future electronic and optical devices. We have investigated semiconducting nanowires made by a novel supercritical fluid solution-phase technique . Conductivity and force interactions in individual semiconductor nanowires were investigated by using an in-situ probing technique using a TEM-SPM [2,3], which is a combination of the scanning probe microscope (SPM) and the transmission electron microscope (TEM). Free standing Si nanowires were high resistive with exhibited metallic behaviour. Nonconductive gap was observed in Ge nanowires. The electromechanical properties of these wires were characterised and a prototype nanorelay was demonstrated.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium F, by Donats Erts
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-16 19:54 Revised: 2009-06-08 12:55