Formation of Ge nanoislands on pure and oxidized Si surface by MBE
|A. Nikiforov 1, V. V. Ulyanov 1, Alexander G. Milekhin 1, O. P. Pchelyakov 1, S. A. Teys 1, S. Schulze 2, Dietrich RT Zahn 2|
1. Institute of Semiconductor Physics SB RAS, Lavrentjeva 13, Novosibirsk 630090, Russian Federation
Phenomena of nanoislands self-organization are of interest to several areas of solid-state physics. Among these objects is the "Ge on Si" heterosystem with Ge nanoislands behaving as quantum dots. The smallest germanium islands growing on the pure silicon surface are 15 nm in size. They can be lowered by growing germanium on the oxidized atomically pure surface prepared in situ in the MBE installation. A MBE installation "Katun-C" was used for synthesis on Si (100) substrates. An MBE growth chamber was used for oxidation at oxygen supply up to 10-4 Pa and the substrate temperature 400-500OC.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by A. Nikiforov
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-16 17:34 Revised: 2009-06-08 12:55