Selective epitaxial growth of Ge/Si quantum dots on patterned Si(001) substrate by ultra high vacuum chemical vapor deposition
|L. H. Nguyen 1, Vinh Le Thanh 2, D. Debarre 1, V. Yam 1, M. Halbwax 1, D. Bouchier 1|
1. Institut d'Electronique Fondamentale, UMR-CNRS 8622, 91405 Orsay Cedex, France, France
In recent years, the growth of Ge/Si quantum dots (QD) has received growing interest due to the possibility for the realisation of novel QD-based electronic and optoelectronic devices. The most widely used technique to produce Ge/Si QD is based on strain-induced growth mode transition from two-dimensional (2D) to islanding growth (3D) in a highly lattice-mismatched heteroepitaxial system (Stranski-Krastanov growth). However, in view of applications of such quantum dots one of the major drawbacks is their random distribution over the substrate surface.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by L. H. Nguyen
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-16 17:27 Revised: 2009-06-08 12:55