Kinetics of heteroepitaxial growth of Ge on Si(001) at low temperature by UHV-CVD
|M. Halbwax 1, V. Yam 1, D. Debarre 1, Lam.H. Nguyen 1, Y. Zheng 2, D. Bouchier 1|
1. Institut d'Electronique fondamentale, Bât 220, université Paris-sud, 91405, Orsay Cedex, France, France
In a next future, optical interconnects will offer a solution to the limitation by metallic interconnects of working frequency of microprocessors. Micro-waveguides processed on SOI with integrated Ge photodetectors appear as an attractive option. However, the growth of a 0.4μm thick fully relaxed Ge film on Si with a low density of threading dislocations remains a challenge. The usually observed Stranski-Krastanov transition can be avoided by using a very low temperature deposition [i] which minimizes the Ge diffusion and favors the formation of vacancies. In situ RHEED was used to investigate the relaxation kinetics during the low temperature deposition. The Ge has been grown on Si at 330C by UHV-CVD at a total pressure of 1.8 10-3 Torr of hydrogen-diluted germane.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by M. Halbwax
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-16 16:37 Revised: 2009-06-08 12:55