Indium segregation effects in InGaAs/GaAs multiple QW heterostructures grown by MOCVD

R. Akchurin 3A. Y. Andreev 3O. I. Govorkov 1A. A. Marmalyuk 2A. V. Petrovsky 2I. D. Zalevsky 2

1. R&D Institute "Polus", 3 Vvedenskogo Street, Moscow 117342, Russian Federation
2. Sigm Plus Co., 3 Vvedenskogo Street, Moscow 117342, Russian Federation
3. Moscow State Academy of Fine Chemical Technology, 86 Vernadskogo Avenue, Moscow 119571, Russian Federation

Abstract

Indium segregation effects during InGaAs/GaAs multiple QW heterostructures formation by MOCVD have been investigated. Epitaxial growth of heterostructures was carried out at 720-770C under low-pressure (~ 60 Torr) using GaAs (100) substrates. TEGa, TMin and AsH3 were used as Ga, In and As sources, respectively. Indium concentration profiles were analyzed by high-resolution Auger-electron spectroscopy. Asymmetry of indium concentration profiles and non-identical of its content in the first grown close spaced QWs was revealed by experimental study.
Two main reasons of the observed phenomenon are discussed: the influence of elastic stresses induced by lattice misfit and indium accumulation near the crystallization surface. The calculation model for simulation of In concentration profiles in single and multiple QW heterostructures and results of calculation are presented.

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Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by R. Akchurin
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-06-16 15:51
Revised:   2009-06-08 12:55
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