Indium segregation effects in InGaAs/GaAs multiple QW heterostructures grown by MOCVD
|R. Akchurin 3, A. Y. Andreev 3, O. I. Govorkov 1, A. A. Marmalyuk 2, A. V. Petrovsky 2, I. D. Zalevsky 2|
1. R&D Institute "Polus", 3 Vvedenskogo Street, Moscow 117342, Russian Federation
Indium segregation effects during InGaAs/GaAs multiple QW heterostructures formation by MOCVD have been investigated. Epitaxial growth of heterostructures was carried out at 720-770C under low-pressure (~ 60 Torr) using GaAs (100) substrates. TEGa, TMin and AsH3 were used as Ga, In and As sources, respectively. Indium concentration profiles were analyzed by high-resolution Auger-electron spectroscopy. Asymmetry of indium concentration profiles and non-identical of its content in the first grown close spaced QWs was revealed by experimental study.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by R. Akchurin
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-16 15:51 Revised: 2009-06-08 12:55
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