Joint Fith International Conference on Solid State Crystals...

 on-line journal

Time
 Duration
 Type
 Presenting person
 Title

May 24th, Thursday

15:00 Opening - Stanisław Krukowski
15:15 Session I: Bulk GaN crystals - Tsuguo Fukuda
15:15 00:30:00 Invited oral Izabella Grzegory Growth anisotropy of GaN single crystals by high pressure and HVPE methods
15:45 00:30:00 Invited oral Fumio Orito Solvothermal Growth of Gallium Nitride Crystals
16:15 00:30:00 Invited oral Fumio Kawamura Growth of Large High-Quality GaN Crystals by Na Liquid Phase Epitaxy Method.
16:45 Coffee Break
17:00 Session II: Templates and other substrates - Izabella Grzegory
17:00 00:30:00 Invited oral Stephan Hussy Low dislocation density GaN-templates grown by the Low Pressure Solution Growth technique
17:30 00:30:00 Invited oral Chiaki Yokoyama Solubility of GaN in Acidic Supercritical Ammonia
18:00 Coffee Break
18:30 Session III: InN, AlN & AlGaN single crystals - Jochen Friedrich
18:30 00:15:00 Oral Robert Dwilinski Flat lattice of truly bulk ammonothermal GaN
18:45 00:30:00 Invited oral Boris Epelbaum Physical Vapor Transport Growth of Bulk AlN Crystals
19:15 00:30:00 Invited oral Takashi Matsuoka Mysterious material InN in nitride semiconductors - what's bandgap energy and its applications?

May 25th, Friday

08:30 Session IV: SiC single crystals - Boris Epelbaum
08:30 00:30:00 Invited oral Toshihiko Hayashi Defect Control for Electric Property of SiC Crystals
09:00 00:30:00 Invited oral Thomas Straubinger Recent Progress in the Growth of 4H-SiC Bulk Crystals
09:30 Coffee Break
10:00 Session V: ZnO crystals - Takashi Matsuoka
10:00 00:30:00 Invited oral Detlef Klimm Melt Growth of Bulk Zinc Oxide
10:30 00:30:00 Invited oral Hiroshi Fujioka Room temperature epitaxial growth of group III nitrides
11:00 00:30:00 Invited oral Takafumi Yao Nanotechnology in GaN and ZnO growths for Novel Device Applications
11:30 Coffee Break
12:00 Session VI: Epitaxy and Characterization - Stanisław Krukowski
12:00 00:30:00 Invited oral Wojciech Wierzchowski Synchrotron topographic investigation of SiC bulk crystals and epitaxial layers
12:30 00:30:00 Invited oral Koji Uematsu Low Dislocation density GaN Crystals by Advanced-DEEP
13:00 00:30:00 Invited oral Nobuhiko Sarukura Solid-state, ultraviolet, high-power laser system using a Ce: LiCAF gain medium
13:30 Closing - Tsuguo Fukuda, Jochen Friedrich, Stanisław Krukowski
13:45 Lunch
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