Time
|
Duration
|
Type
|
Presenting person
|
Title
|
August 12th, Monday |
|
| 11:00 |
MoO1 - Michal Leszczynski (Poland) - G10: Thin film and epitaxial growth - Room C, Auditorium Maximum |
| 11:00 |
00:30:00 |
Invited oral |
Euijoon Yoon |
Hollow nanostructure-assisted growth of GaN by MOCVD and its applications |
| 11:30 |
00:15:00 |
Oral |
Baskar Krishnan |
Effect of nucleation islands coalescence on determining the quality of AlN layers grown by MOCVD |
| 11:45 |
00:15:00 |
Oral |
Bojan Mitrovic |
Effect of process conditions on wafer curvature due to thermal stresses and wafer-to-carrier temperature gradient during MOCVD growth in vertical rotating disc reactors |
| 12:00 |
00:15:00 |
Oral |
Chu-An Li |
Growth and characterizations of nonpolar InN epitaxial film on LiGaO2 substrate by halide vapor phase epitaxy |
| 12:15 |
00:15:00 |
Oral |
Alexey V. Novikov |
The epitaxial growth of Ge/Si structures on SiGe/Si(001) strain-relaxed buffers: transition from planar to island growth mode |
| 12:30 |
00:15:00 |
Oral |
Zhanna V. Smagina |
Growth of ordered Ge nanoislands on Si surface patterned by ion irradiation |
| 12:45 |
00:15:00 |
Oral |
Darrell G. Schlom |
Synthesis of defect-mitigating tunable dielectric materials by MBE |
| 13:00 |
Lunch (JCG Editors meeting) |
| 15:00 |
MoO2 - Alexey V. Novikov (Russia) - G10: Thin film and epitaxial growth - Room C, Auditorium Maximum |
| 15:00 |
00:30:00 |
Invited oral |
Carol Thompson |
In situ x-ray studies of epitaxial growth by MOVPE |
| 15:30 |
00:15:00 |
Oral |
Sandra Rubio |
Influence of CdS deposition technique on CdS/CdTe thin films |
| 15:45 |
00:15:00 |
Oral |
Jose Luis Plaza |
CdS and CdTe films grown by close space vapour sublimation using resistive heaters for solar cell applications: Experimental and numerical analysis |
| 16:00 |
00:15:00 |
Oral |
Hitoshi Habuka |
Low Temperature Amorphous Silicon Carbide Thin Film Formation Process on Aluminum Surface Using Monomethylsilane Gas and Trichlorosilane Gas |
| 16:15 |
00:15:00 |
Oral |
Gurvan Brasse |
Liquid phase epitaxy of rare earth doped LiYF4 layers for the elaboration of compact laser planar waveguides |
| 16:30 |
00:15:00 |
Oral |
Wester De Poel |
Epitaxial growth of molecules and salts on muscovite mica |
| 16:45 |
00:15:00 |
Oral |
Yuriy V. Zorenko |
Development of novel scintillating screens based on thesingle crystalline films of Ce doped multi-component (Gd,Y,Lu,La)3(Al,Ga,Sc)5O12 garnets by LPE method |
| 17:00 |
MoP-G10 - Room 205, Old Library |
| 17:00 |
#Mo112 |
Poster |
Bunyod Allabergenov |
Microstructural analysis and optical characteristics of Cu-doped ZnO thin films prepared by DC magnetron sputtering |
| 17:00 |
#Mo113 |
Poster |
Štefan Chromik |
Structural properties of epitaxial La0.66Sr0.33MnO3 films with increased temperature of metal-insulator transition |
| 17:00 |
#Mo114 |
Poster |
Jan Grym |
Epitaxial growth on porous substrates of III-V semiconductors |
| 17:00 |
#Mo115 |
Poster |
Yujirou Hirota |
Selective growth of (001) GaAs using patterned graphene mask |
| 17:00 |
#Mo116 |
Poster |
Xiuguang Jin |
Nano-scale characterization of GaAsP/GaAs strained superlattice structures by nano-beam electron diffraction |
| 17:00 |
#Mo118 |
Poster |
BongKyun Kang |
Optical properties and crystallinity of the GaN film grown on the SiO2 based nanocomposites by MOCVD |
| 17:00 |
#Mo119 |
Poster |
Byongju Kim |
Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays |
| 17:00 |
#Mo120 |
Poster |
Aleksandra Wierzbicka |
Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates |
| 17:00 |
#Mo121 |
Poster |
Takeshi Kusumori |
Epitaxial growth of SmFe7 films on Ta-buffered sapphire substrate using the RF magnetron sputtering method |
| 17:00 |
#Mo122 |
Poster |
Aleksandra Lazarenko |
Structural and optical properties of GaPN(As) and InGaPN layers grown by MBE |
| 17:00 |
#Mo123 |
Poster |
Oleksiy Lebedynskiy |
ZnWO4 films obtained by ion–beam sputtering and hydrothermal method |
| 17:00 |
#Mo124 |
Poster |
Hsin-Yi Lee |
Fabrication of BiFeO3/LaNiO3 epitaxial superlattice structures by RF sputtering |
| 17:00 |
#Mo125 |
Poster |
Arsen Muslimov |
Supphire Substrates With The Regular Relief Surface |
| 17:00 |
#Mo126 |
Poster |
Marco Negri |
3C-SiC growth and characterization using methyltrichlorosilane |
| 17:00 |
#Mo127 |
Poster |
Marco Negri |
Influence of the growth conditions on the properties of Germanium epilayers grown by MOVPE on Si |
| 17:00 |
#Mo128 |
Poster |
Takeshi Ohgaki |
Growth condition dependence of electric properties of ScN films on (100) MgO substrates prepared by molecular beam epitaxy |
| 17:00 |
#Mo129 |
Poster |
Igor V. Osinnykh |
Self-compensation effect of the silicon impurity in heavily doped AlGaN layers |
| 17:00 |
#Mo130 |
Poster |
Rafał M. Rapacz |
Spectroscopic characterization of high-quality polycrystalline Bi-Te films grown by thermal evaporation |
| 17:00 |
#Mo131 |
Poster |
Hamid Rezagholipour Dizaji |
An Investigation on Optical and Structural Properties of Nanocrystalline CdTe Thin Films Growth by Employing a New Vapor Flow Controlling System |
| 17:00 |
#Mo132 |
Poster |
Alexander M. Samoylov |
The Improved Procedure of Ga-doped PbTe Films One Stage Synthesis by Modified HWE Technique |
| 17:00 |
#Mo133 |
Poster |
Alexander M. Samoylov |
Surface morphology and structure of CaF2/BaF2–on-Si epitaxial layers and the electronic properties of the interface with the substrate |
| 17:00 |
#Mo134 |
Poster |
Alexander M. Samoylov |
Heterostructures PbTe:Ga/BaF2/CaF2/Si for IR photodetectors |
| 17:00 |
#Mo135 |
Poster |
Yong Gon Seo |
Anisotropic characteristics of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition |
| 17:00 |
#Mo136 |
Poster |
Tatiana V. Setkova |
Epitaxial growth of Ga-rich tourmaline on natural elbaite seed in boric hydrothermal solutions |
| 17:00 |
#Mo137 |
Poster |
Jakub Skibinski |
Modeling of heat and mass transfer in GaN MOVPE reactor |
| 17:00 |
#Mo138 |
Poster |
Chia-Lung Tsai |
InGaN light-emitting diodes with an asymmetric multiple quantum well |
| 17:00 |
#Mo139 |
Poster |
Mateusz Wośko |
u-GaN buffer resistivity control for AlGaN/GaN HEMT's |
| 17:00 |
#Mo140 |
Poster |
Yuriy V. Zorenko |
Growth and luminescent properties of Ce and Ce-Tb doped (Y,Lu,Gd)2SiO5:Ce single crystalline films |
| 18:30 |
Break |
August 13th, Tuesday |
|
| 10:20 |
TuO1 - Joan J. Carvajal (Spain) - G10: Thin film and epitaxial growth - Room C, Auditorium Maximum |
| 10:20 |
00:30:00 |
Invited oral |
Eva Monroy |
Plasma-Assisted MBE of III-nitride semiconductors: From two-dimensional layers to nanostructures |
| 10:50 |
00:30:00 |
Invited oral |
William A. Doolittle |
Growth Methodologies for Overcoming the Perceived Limitations of Phase Separation and p-type Doping in InGaN |
| 11:20 |
00:15:00 |
Oral |
Henryk Turski |
Indium incorporation mechanism during InGaN growth by plasma-assisted molecular beam epitaxy |
| 11:35 |
00:15:00 |
Oral |
Marta Sawicka |
Semipolar (2021) UV LEDs and LDs grown by PAMBE |
| 11:50 |
00:15:00 |
Oral |
Shao-fu Fu |
Effects of ceiling temperature on In incorporation and optical properties of InGaN epilayers grown by two-heater MOCVD reactor |
| 12:05 |
00:15:00 |
Oral |
Baskar Krishnan |
Structural and optical characterization of AlGaN/GaN layers |
| 12:20 |
Lunch (IOCG Exec. Com. meeting) |
| 14:00 |
TuO2 - Stefano Sanguinetti (Italy) - G10: Thin film and epitaxial growth - Room C, Auditorium Maximum |
| 14:00 |
00:30:00 |
Invited oral |
Shizuo Fujita |
Epitaxial growth of wide band gap oxide semiconductor thin films |
| 14:30 |
00:15:00 |
Oral |
Joan J. Carvajal |
Crystal growth of RbTiOPO4 epitaxial layers and optical waveguide applications |
| 14:45 |
00:15:00 |
Oral |
Elena A. Volkova |
High-temperature growth and comparative characterization of (Er,Yb):YAl3(BO3)4 and NdAl3(BO3)4 epitaxial layers |
| 15:00 |
00:15:00 |
Oral |
Weidong Wu |
The controllable growth and properties of self-assembly Ni-BaTiO3/ SrTiO3 nano-composite epitaxial film by laser molecular beam epitaxy |
| 15:15 |
00:15:00 |
Oral |
Hongyang Zhao |
Origin of the room-temperature magnetoelectric coupling in multiferroic Bi5Ti3FeO15 |
| 15:30 |
Break |
August 14th, Wednesday |
|
| 10:20 |
WeO1 - Ferdinand Scholz (Germany) - G10: Thin film and epitaxial growth - Room C, Auditorium Maximum |
| 10:20 |
00:30:00 |
Invited oral |
Wolfgang Stolz |
Novel dilute nitride III/V-semiconductor laser system for the monolithic integration to Si-microelectronics |
| 10:50 |
00:15:00 |
Oral |
Hubert Valencia |
Ab initio Study of GaAs(100) Surfaces Under As2, H2, and N2 Influence, as a Model for Vapor-Phase Epitaxy of GaAs1-xNx |
| 11:05 |
00:15:00 |
Oral |
Charles Renard |
Dislocation and antiphase domain-free microscale GaAs crystals grown on SiO2 from (001) and (111) Si nano-areas |
| 11:20 |
00:15:00 |
Oral |
Stefano Sanguinetti |
Heteorepitaxy of high quality GaAs crystals on Silicon |
| 11:35 |
00:15:00 |
Oral |
Hamad A. Albrithen |
Strontium Doped ZnO Grown by Pulsed Laser Deposition: Structural and Optical Properties |
| 11:50 |
00:15:00 |
Oral |
Noriko Akutsu |
Pinning of steps near equilibrium without impurities, adsorbates, or dislocations |
| 12:20 |
Lunch (IOCG Council meeting) |
