E-MRS Fall Meeting 2009

 on-line journal

Time
Duration
Type
Presenting person
Title

September 15th, Tuesday

09:00 00:30:00 Keynote lecture Gregory N. Gol'tsman Superconducting hot-electron bolometer based on NbN nanostructures as THz mixer, direct detector and IR single-photon counter
09:30 00:30:00 Invited oral Wojciech Knap Comparison of Silicon Versus III-V Semiconductor Material Choice for Terahertz Imaging with Fast Field Effect Transistors Based Detectors
10:00 00:30:00 Invited oral Hui Chun Liu THz Quantum Devices
11:00 00:30:00 Invited oral Sergey D. Ganichev All electrical detection of the Stokes parameters of infrared/terahertz radiation
11:30 00:30:00 Invited oral Alexander Shkurinov Porous and oxide materials in the terahertz frequency range
12:00 00:15:00 Oral Valerii V. Shulga Design of IF extra-low power consumption amplifiers at ≤ 1 K for terahertz matrix  receivers, bolometer arrays and quantum devices
12:15 00:15:00 Oral Vaidas Pačebutas GaBiAs layers for terahertz optoelectronic devices activated by 1 μm wavelength laser pulses
14:00 00:30:00 Invited oral Robert Rehm Physics, Technology and Performance of Strained Layer Superlattice Infrared Detectors
14:30 00:30:00 Invited oral Sanjay Krishna Infrared Detectors with Quantum Dots and Type II InAs/GaSb Strained Layer Superlattices
14:45 00:15:00 Oral Yuksel Ergun Photoconductive Properties of GaAs-AlGaAs Broad Band Quantum Well Infrared Photodetectoers
15:00 00:15:00 Oral Frank Szmulowicz Two materials studies on residual background carriers and density dependent carrier mobilities in InAs/GaSb superlattices
16:00 00:15:00 Oral Maciej Bugajski High pulse power mid-infrared AlGaAs/GaAs quantum cascade lasers
16:15 00:15:00 Oral Subhananda Chakrabarti A comparative study of single layer and bi-layer InAs/GaAs quantum dots (QDs) with higher InAs monolayer coverage
16:30 00:15:00 Oral Maxym Strikha Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1-xCdxTe
16:45 00:15:00 Oral Dorota Pierscinska Thermal analysis of GaAs/AlGaAs quantum – cascade lasers

September 16th, Wednesday

09:00 00:30:00 Keynote lecture Hans-Peter Roeser  Electron transport in nanostructures: the key to high temperature superconductivity
09:30 00:15:00 Oral Jean-Marc Routoure La0.7Sr0.3MnO3 thin films for uncooled bolometers
09:45 00:30:00 Invited oral Hans Zogg Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides
10:15 00:15:00 Oral Ahmed Al-Jumaily Transparent electroactive films for optical applications
11:00 00:30:00 Invited oral Jozef Piotrowski Room temperature infrared photodetectors
11:30 00:15:00 Oral Antoni Rogalski History of HgTe-based photodetectors in Poland
11:45 00:15:00 Oral Paweł Madejczyk Acceptor doping control in MOCVD grown HgCdTe layers.
12:00 00:15:00 Oral Eugene M. Sheregii Far-infrared reflectivity as a probe of point defects in Zn- and Cd-doped HgTe
14:00 00:15:00 Oral Malgorzata M. Pociask The study of HgCdTe MBE-grown structure with ion milling
14:15 00:15:00 Oral Alexander M. Samoylov The  determination  of solubility limits of gallium impurity  in  PbTe films doped with Ga  on  Si  substrates
14:30 00:15:00 Oral Sergei Dvoretsky Linear 288×4 long wavelength infrared mercury cadmium telluride detector
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